Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric
Min Li1,2, Yong Luo2, Xiaojuan Hu3
1School of Materials and Chemical Engineering, Ningbo University of Technology Ningbo 315016 China cuijiaolin@163.com.
Abstract:
Copper vacancy concentration (V c) in ternary Cu-In-Te chalcogenides is an important factor to engineer carrier concentration (n H) and thermoelectric performance. However, it is not sufficient to regulate the phonon scattering in the Cu3In5Te9-based chalcogenides. In this work we manipulate the V c value and point defects simultaneously through addition of Cu along with Ga substitution for In in Cu3In5Te9, and thereby increase the carrier concentration and reduce the lattice thermal conductivity. This strategy finally enables us to achieve ∼60% enhancement of the TE figure of merit (ZT) at V c = 0.078 compared with the pristine Cu3In5Te9. It is also used as guidance to achieve the high TE performance of the ternary chalcogenides.
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