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Updated: Sep 24, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Rui Wang1, Saisai Wang1, Kun Liang2
1Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China.
Indium-gallium-zinc-oxide phototransistors enable in-sensor compression and computing. This neuromorphic system achieves high recognition accuracy even with 50% signal compression, paving the way for efficient data processing.
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