Collision cascades interact with an edge dislocation in bcc Fe: a molecular dynamics study
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Updated: Sep 23, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Hao Wang1, Ji-Ting Tian2, Wei Zhou2
1State Key Laboratory of Nuclear Physics and Technology, School of Physics, CAPT, HEDPS, and IFSA Collaborative Innovation Center of MoE College of Engineering, Peking University Beijing People's Republic of China jmxue@pku.edu.cn.
Abstract:
The interactions of an edge dislocation (ED) with collision cascades induced by 5 keV primary knocked-on atoms (PKAs) towards the ED in bcc Fe are studied using classical molecular dynamics (MD) simulations. It is found that the number and distribution of the residual point defects are related to the distance between the initial PKAs and the ED. Based on this result, we provide a comprehensive summary of four characteristic phenomena for cascade-ED interactions, including few interactions, the formation of a vacancy cluster, the sink effect for point defects, and the sub-cascade area affection, depending on the overlap of the peak cascades' area with the ED line. Then a qualitative model is proposed to clearly elucidate the underlying mechanisms of the four situations. Considering that dislocations constitute an essential part of the micro-structure of crystalline solids, our work demonstrates that: the pre-existing dislocations in crystalline materials could induce diverse effects under irradiation environments, which should be taken into account for designing and improving the radiation resistant materials.
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