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Updated: Sep 23, 2025

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
High temperature gas sensing performances of silicon carbide nanosheets with an n-p conductivity transition
Lian Sun1, Cheng Han1, Nan Wu1
1Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology Changsha 410073 China cfcwb01@163.com wangyingde@nudt.edu.cn +86 731 84574196.
Abstract:
Fast and effective detecting of flammable and explosive gases in harsh environments (high temperature, corrosion atmosphere) is crucial for preventing severe accidents for the chemical industry, fuel cell applications and engine tests. Silicon carbide material is reported to be a good candidate for gas sensing devices applied in extreme conditions. Herein, high-temperature available silicon carbide nanosheets (SiC NSs) were synthesized from graphene oxide (GO) via a catalyst-free carbothermal method. The structure and composition of SiC NSs under different reaction conditions are carefully characterized. The received SiC NSs were firstly utilized as gas sensing materials for hazardous gases (acetone, ethanol, methanol and ammonia) at a high temperature (500 °C). Importantly, the SiC NSs sensors exhibited a fast response (8-39 s) and recovery (12-69 s) towards detecting gases. Besides, an n-p conductivity transition phenomenon is found and studied. This paper firstly proves that such SiC NSs has the potential to be used in gas sensing fields.
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