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Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping.

Hang Lu¹, Yingying Chen¹, Qing Chang¹

¹Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 P. R. China iamjqliu@njtech.edu.cn iamwhuang@njtech.edu.cn.

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Area of Science:

Materials Science
Organic Electronics
Nanotechnology

Background:

The development of advanced electronic devices with multiple functionalities is crucial for next-generation technologies.
Self-rectifying memory diodes offer potential for integrated memory and signal processing applications.

Purpose of the Study:

To propose and fabricate a novel self-rectifying memory diode utilizing a polymer-carbon dot hybrid structure.
To investigate the rectifying and memory characteristics of the fabricated device.

Main Methods:

Fabrication of a diode with the structure rGO/PEDOT:PSS/carbon dots/MEH-PPV/Al.
Characterization of the device's electrical properties, including rectification and ON/OFF current ratio.

Main Results:

The fabricated device exhibited a rectification ratio of 10^3.
An ON/OFF current ratio of 121 was achieved in the memory mode.
Rectifying behavior was linked to energy level offsets, while the memory effect stemmed from carrier trapping in carbon dots.

Conclusions:

A polymer-carbon dot hybrid structure enables the creation of self-rectifying memory diodes.
The device shows promising performance for electronic applications requiring both rectification and memory functions.