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Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells
Svette Reina Merden Santiago1, Septem P Caigas1, Tzu-Neng Lin1
1Department of Physics and Center for Nanotechnology, Chung Yuan Christian University Chung-Li 32023 Taiwan jlshen@cycu.edu.tw.
RSC Advances
|May 11, 2022
Summary
We developed a novel tunnel-injection structure using tungsten disulfide quantum dots (WS₂ QDs) and indium gallium nitride/gallium nitride quantum wells (InGaN/GaN QWs). This structure enhances light emission efficiency and confirms quantum tunneling mechanisms.
Area of Science:
- Materials Science
- Quantum Electronics
- Nanotechnology
Background:
- Efficient charge carrier injection is crucial for optoelectronic devices.
- Quantum dots (QDs) and quantum wells (QWs) are key nanomaterials for light emission.
Purpose of the Study:
- To investigate a novel tunnel-injection structure for enhanced light emission.
- To characterize charge carrier dynamics and tunneling mechanisms in WS₂ QD/InGaN QW heterostructures.
Main Methods:
- Fabrication of a tunnel-injection structure with varying barrier thicknesses.
- Characterization using steady-state and time-resolved photoluminescence (PL).
- Analysis of PL intensity and decay times.
Main Results:
- Simultaneous enhancement of PL intensity and decay time in InGaN/GaN QWs.
- Extraction of tunneling time, showing an increase with barrier thickness.
- Observed tunneling behavior aligns with the Wentzel-Kramers-Brillouin (WKB) model.
Conclusions:
- The proposed WS₂ QD/InGaN QW structure facilitates efficient tunnel injection of charge carriers.
- The study confirms the quantum tunneling mechanism between WS₂ QDs and InGaN QWs.
- This work provides insights into designing advanced optoelectronic devices based on nanomaterials.
