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Related Experiment Video

Updated: Sep 23, 2025

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Published on: February 12, 2017

Nanolithography using thermal stresses.

Gangadhar Purohit^1,2, Deepak^1,2, Monica Katiyar^1,2

¹Materials Science & Engineering, Indian Institute of Technology Kanpur UP-208016 India.

|May 11, 2022

Summary

This study presents a scalable, parallel fabrication method for creating nanogaps in gold electrodes. The technique utilizes controlled cracking in ceramic-metal multilayers, enabling high-throughput production for nanoscale devices.

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Published on: June 12, 2018

Area of Science:

Materials Science
Nanotechnology
Electrical Engineering

Background:

Nanogaps in electrodes are crucial for various nanoscale devices, including those in nanoelectronics, nanophotonics, and biosensing.
Existing nanolithography techniques are often serial and not scalable for mass production.

Purpose of the Study:

To demonstrate a scalable, parallel fabrication method for producing nanogaps in gold electrodes with high throughput.
To develop a technique using readily available semiconductor fabrication tools.

Main Methods:

Designing ceramic/metal multilayer structures (SiO2/Au/Ti) patterned with optical lithography.
Inducing tensile stress in the ceramic layer via thermal heating, causing controlled cracking.
Wet etching the underlying metal layer after ceramic layer separation to form the nanogap.
Utilizing a predefined notch to precisely locate the nanogap.

Main Results:

Achieved simultaneous nanogap formation across large areas/wafers.
Verified nanogap dimensions of approximately 150-300 nm in gold electrodes.
Confirmed functionality through optical microscopy, FE-SEM imaging, and electrical isolation tests.

Conclusions:

The developed technique offers a scalable and high-throughput solution for nanogap fabrication.
This method is compatible with existing semiconductor fabrication facilities.
The approach is suitable for producing essential components for advanced nanoscale devices.