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Updated: Sep 23, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

Diffusion doping route to plasmonic Si/SiO nanoparticles.

Sergei S Bubenov¹, Sergey G Dorofeev¹, Andrei A Eliseev^1,2

¹Department of Chemistry, Lomonosov Moscow State University 1-3 Leninskie Gory Moscow 119991 Russia dorofeev_sg@mail.ru.

|May 11, 2022

Summary

We report a novel method for doping semiconductor nanoparticles (SNPs) with phosphorus. This technique allows for controlled impurity incorporation and high electrical activation, enhancing their functionality for advanced materials.

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Synthesis, Characterization, and Functionalization of Hybrid Au/CdS and Au/ZnS Core/Shell Nanoparticles

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Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Semiconductor nanoparticles (SNPs) are crucial for functional materials.
Engineering SNP electronic structure requires advanced doping techniques.
Post-synthetic doping methods like diffusion offer controlled impurity introduction.

Purpose of the Study:

To report on the doping of silicon/silicon dioxide (Si/SiO2) SNPs using phosphorus diffusion.
To investigate the control over impurity incorporation and distribution.
To confirm the electrical activity and efficiency of the doping process.

Main Methods:

Annealing Si/SiO2 SNPs in gaseous phosphorus.
High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction for structural analysis.
Elemental analysis (e.g., EDX) and thermopower measurements for doping characterization.

Main Results:

Achieved doping levels up to 10% with controlled impurity incorporation via precursor vapor pressure.
Confirmed retention of nanocrystallinity and uniform phosphorus distribution within silicon cores.
Demonstrated electrical activity of phosphorus, with impurity activation efficiencies up to 34%.

Conclusions:

Diffusion doping of Si/SiO2 SNPs with phosphorus is an effective post-synthetic method.
The technique allows for precise control over doping levels and impurity distribution.
High impurity activation efficiencies highlight the potential of this method for advanced nanosilicon-based functional materials.