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Updated: Sep 23, 2025

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Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in
Ying Xin1, Xiaofeng Zhao2, Xiankai Jiang1
1School of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com.
Abstract:
Poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized under a Suzuki coupling reaction, and its structure was proved by Fourier transform infrared (FT-IR) spectroscopy, and hydrogen and carbon nuclear magnetic resonance (1H-NMR and 13C-NMR). A nonvolatile organic memristor, based on active layers of PFO and PFO:GO composite, was prepared by spin-coating and the influence of GO concentration on the electrical characteristics of the memristor was investigated. The results showed that the device had two kinds of conductance behavior: electric bistable nonvolatile flash memory behavior and conductor behavior. With an increase in GO concentration, the device has an increased ON/OFF current ratio, increasing from 2.1 × 101 to 1.9 × 103, a lower threshold voltage (V SET), decreasing from -1.1 V to -0.7 V, and better stability. The current remained stable for 3 hours in both the ON state and OFF state, and the ON and OFF state current of the device did not change substantially after 9000 read cycles.
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