Related Experiment Video
Updated: Sep 23, 2025
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel
Dun-Bao Ruan1, Po-Tsun Liu2, Yu-Chuan Chiu2
1Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University Hsinchu 30010 Taiwan.
Abstract:
This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO2 gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO2 gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.
