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Published on: April 15, 2013
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Selective modification of aligned carbon nanotubes by N2 plasma and their diode behavior
Hsin-Jung Tsai1, Yu-Ying Su1, Chao-Chi Tseng1
1Department of Materials Science and Engineering, National Tsing-Hua University Hsinchu 30013 Taiwan wkhsu@mx.nthu.edu.tw.
RSC Advances
|May 11, 2022
Summary
Nitrogen plasma treatment of aligned carbon nanotubes creates polar bonds, forming p-n junctions. This enables diode behavior in nanotubes, paving the way for novel electronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Aligned carbon nanotubes (CNTs) offer unique electronic properties.
- Controlled surface modification is crucial for tailoring CNT functionality.
- Plasma treatments are effective for surface functionalization of nanomaterials.
Purpose of the Study:
- To investigate the effects of nitrogen plasma treatment on aligned CNTs.
- To explore the formation of polar bonds and their impact on CNT properties.
- To assess the potential for creating p-n junctions within individual CNTs.
Main Methods:
- Pyrolysis of ferrocene to create aligned CNTs.
- Selective surface treatment using N2 plasma at varying durations.
- Characterization using Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS).
- Electrical transport measurements to probe junction characteristics.
- Ab initio calculations to confirm theoretical models.
Main Results:
- Nitrogen plasma treatment induced the formation of polar C-O and C-N bonds.
- Raman spectra showed an increased breathing mode in treated regions.
- Electrical measurements demonstrated unipolar p-type behavior in untreated CNTs.
- Contact between treated and untreated regions exhibited p-n junction diode characteristics.
- Forward currents reached up to 100 mA at 3 V.
Conclusions:
- Selective N2 plasma treatment effectively functionalizes CNT surfaces.
- The formation of C-N bonds creates on-tube p-n junctions.
- These functionalized CNTs can function as diodes, opening possibilities for nanoelectronic devices.

