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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Magnesium β-ketoiminates as CVD precursors for MgO formation
Elaheh Pousaneh1, Tobias Rüffer1, Khaybar Assim1
1Technische Universität Chemnitz, Faculty of Natural Sciences, Institute of Chemistry, Inorganic Chemistry D-09107 Chemnitz Germany heinrich.lang@chemie.tu-chemnitz.de +49-(0)371-531-21219 +49(0)371-531-21210.
New bis(ketoiminato)magnesium(ii) complexes were synthesized and characterized. These complexes show promising volatility for use as precursors in Metal-Organic Chemical Vapor Deposition (MOCVD) for thin magnesium oxide (MgO) films.
Area of Science:
- Organometallic Chemistry
- Materials Science
- Chemical Vapor Deposition
Background:
- Bis(ketoiminato)magnesium(ii) complexes offer potential as precursors for materials deposition.
- Understanding the structure-property relationships of these complexes is crucial for optimizing deposition processes.
Purpose of the Study:
- To synthesize and characterize novel bis(ketoiminato)magnesium(ii) complexes.
- To investigate their thermal stability and volatility.
- To evaluate their efficacy as precursors for depositing thin magnesium oxide (MgO) films via Metal-Organic Chemical Vapor Deposition (MOCVD).
Main Methods:
- Synthesis of complexes using magnesium tert-butoxide and ketoiminato ligands.
- Characterization by X-ray diffraction, thermogravimetric analysis (TG), differential scanning calorimetry (DSC), and thermogravimetric-mass spectrometry (TG-MS).
- Evaluation as MOCVD precursors for MgO thin film deposition on silicon substrates, with characterization by SEM, EDX, XPS, and ellipsometry.
Main Results:
- Successful synthesis and structural determination of bis(ketoiminato)magnesium(ii) complexes [Mg(OCR2CH2CHR1NCH2CH2X)2].
- Complexes 3a and 3c exhibit higher volatility (5.6 mbar and 2.0 mbar, respectively) compared to 3b (0.07 mbar) at 80 °C.
- MOCVD using complexes 3a and 3c yielded thin, dense MgO films (28-147 nm thickness) with low carbon content (3-4 mol%).
Conclusions:
- Bis(ketoiminato)magnesium(ii) complexes 3a and 3c are suitable MOCVD precursors for depositing high-quality MgO thin films.
- The volatility of the complexes directly influences the quality and deposition rate of the MgO films.
- Further research can explore tuning ligand structures to optimize precursor properties for advanced thin film applications.
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