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Updated: Sep 23, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Bending effect on the resistive switching behavior of a NiO/TiO2 p-n heterojunction
Hai-Peng Cui1, Jian-Chang Li1, Hai-Lin Yuan1
1Vacuum and Fluid Engineering Research Center, School of Mechanical Engineering & Automation, Northeastern University Shenyang 110819 PR China jcli@mail.neu.edu.cn +86 13804075191.
Abstract:
Herein, NiO/TiO2 heterojunctions were fabricated by sol-gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p-n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions. Finite element calculations indicate that the tensile stress of 0.79% can lead to the formation of channel cracks. Further charge transport analysis shows that the conducting filaments may cause an incomplete rupture because the bending-induced channel crack permeates through the p-n interface and reduces the local depletion-region width.
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