Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy
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Published on: November 28, 2017
Miao Chen1, Bin Zhou1, Fang Wang1
1Key Laboratory of Polar Materials and Devices (MOE), Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering, East China Normal University Shanghai 200241 China lyshang@ee.ecnu.edu.cn zghu@ee.ecnu.edu.cn +86-21-54345119 +86-21-54345150.
Abstract:
Ultrathin 1T (tetragonal)-TaS2 and monolayer MoS2 heterostructures were prepared to study their phase transition (PT) mechanisms and band structure modulation. The temperature dependency of photoluminescence (PL) and Raman spectra was utilized to study interlayer coupling and band structure. The PL results indicate that the band structure of MoS2/TaS2 heterostructures undergoes a sharp change at 214 K. This is attributed to the PT of 1T-TaS2 from a Mott insulator state to a metastable state. In addition, the temperature dependency of the MoS2/TaS2 Raman spectra illustrates that the phonon vibration of the heterojunction is softened due to the effect of interlayer coupling. The present work could provide an avenue to create material systems with abundant functionalities and physical effects.
