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A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon
Kenta Nakagawa1,2, Hidenori Takahashi1, Yui Shimura1
1Department of Applied Physics and Physico-Informatics, Keio University 3-14-1 Hiyoshi, Kohoku-ku Yokohama Kanagawa 223-8522 Japan maki@appi.keio.ac.jp.
RSC Advances
|May 11, 2022
Summary
Researchers created a novel method for direct graphene patterning on silicon, enabling precise control over placement and form without damaging dry etching. This technique yields high-performance light-emitting graphene devices comparable to those from traditional methods.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Graphene's unique electronic and optical properties make it promising for advanced devices.
- Current methods for graphene fabrication and patterning can be complex, costly, or damaging.
Purpose of the Study:
- To develop a direct patterning method for graphene on silicon substrates.
- To achieve arbitrary control over graphene's position, size, and shape.
- To fabricate high-performance light-emitting graphene devices.
Main Methods:
- Direct patterning of graphene from a solid-state carbon source on silicon.
- Elimination of dry etching processes for fabrication.
- Device fabrication and performance characterization of light-emitting graphene.
Main Results:
- Successful direct patterning of graphene with arbitrary control over placement and form.
- Graphene devices fabricated using this method exhibit performance comparable to those made with mechanical exfoliation or chemical vapor deposition.
- Demonstration of functional light-emitting graphene devices.
Conclusions:
- The developed procedure offers a simplified and effective route for graphene patterning on silicon.
- This method enables the creation of high-quality graphene structures for optoelectronic applications.
- The direct patterning technique holds potential for scalable and cost-effective graphene device manufacturing.
