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Updated: Sep 23, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
l-Alanine capping of ZnO nanorods: increased carrier concentration in ZnO/CuI heterojunction diode
E Indubala1,2, M Dhanasekar3,4, V Sudha2
1Electrochemical Systems Lab, SRM Research Institute, SRM Institute of Science and Technology Kattankulathur Chennai - 603203 India harinipriya.s@res.srmuniv.ac.in.
Abstract:
ZnO nanorods were capped with a simple amino acid, viz., l-alanine to increase the carrier concentration and improve the performance of ZnO/CuI heterojunction diodes. The effect of l-alanine capping on the morphology, structural, optical, electrochemical and electrical properties of ZnO nanorods had been studied in detail. The stable structure with two equally strong Zn-O coordinate bonds predicted by density functional theory was in agreement with the experimental results of FTIR spectroscopy. Due to the presence of electron-releasing (+I effect) moieties in l-Alanine, the carrier concentration of capped ZnO nanorods was two orders of magnitude higher and the ZnO/CuI heterojunction device showed more than a two-fold increase in the photovoltaic power conversion efficiency.
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