Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
Dandan Sang1, Qingru Wang1, Qinglin Wang1
1School of Physics Science and Information Technology, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University Liaocheng 252059 China wangqinglin@lcu.edu.cn phywwang@163.com.
Abstract:
A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I-V characteristics and relatively high performance for the electrical transport properties.
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