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Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating
Yan Li1, Dongxing Zheng1, Chen Liu1
1Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
Abstract:
Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear. Herein, we systematically investigated the SOT in insulating compensated ferrimagnetic Gd3Fe5O12/Pt heterostructures with perpendicular magnetic anisotropy. A nearly room-temperature compensation point (Tcomp ∼ 297 K) was consistently identified by the magnetization curves, spin Hall-induced anomalous Hall effect, and spin Hall magnetoresistance measurements. Moreover, using 100 ns duration pulsed current, deterministic current-induced magnetization switching below and above Tcomp, even at 294 and 301 K, was achieved with opposite switching polarity. It is found that a large current is required to switch the magnetization in the vicinity of Tcomp, although the effective SOT field increases close to Tcomp. Our finding provides alternative opportunities for exploring ultrafast room-temperature magnon-based devices.
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