Tensile Mechanical Behavior and the Fracture Mechanism in Monolayer Group-III Nitrides XN (X= Ga, In): Effect of...

In this study, we have thoroughly investigated the tensile mechanical behavior of monolayer XN (X = Ga, In) using molecular dynamics simulations. The effects of temperature (100 to 800 K) and point vacancies (PVs, 0.1 to 1%) on fracture stress, strain, and elastic modulus of GaN and InN are studied. The effects of edge chiralities on the tensile mechanical behavior of monolayer XN are also explored. We find that the elastic modulus, tensile strength, and fracture strain reduce with increasing temperature. The point defects cause the stress to be condensed in the vicinity of the vacancies, resulting in straightforward damage. On the other hand, all the mechanical behaviors such as fracture stress, elastic modulus, and fracture strain show substantial anisotropic nature in these materials. To explain the influence of temperature and PVs, the radial distribution function (RDF) at diverse temperatures and potential energy/atom at different vacancy concentrations are calculated. The intensity of the RDF peaks decreases with increasing temperature, and the presence of PVs leads to an increase in potential energy/atom. The current work provides an insight into adjusting the tensile mechanical behaviors by making vacancy defects in XN (X = Ga, In) and provides a guideline for the applications of XN (X = Ga, In) in flexible nanoelectronic and nanoelectromechanical devices.