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Published on: September 27, 2018
Preparation of high-concentration substitutional carbon-doped TiO2 film via a two-step method for high-performance
Jun Wu1, Xudong Jiang2, Yupeng Zhang3
1School of Physics and Technology, MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University Wuhan 430072 China cxpan@whu.edu.cn.
Abstract:
In this paper, we present a facile two-step method for preparing a high-concentration substitutional carbon-doped TiO2 (TiO2- C ) film. First, the titanium substrate undergoes gas carburizing, followed by micro-arc oxidation (MAO) to form a carbon-doped TiO2 film on the surface. The process can be described as direct oxidation of titanium carbide (O→TiC ). The experimental results reveal that compared with traditional thermal annealing, this process could increase the carbon doping concentration to 6.07 at% and x to 0.24 in TiO2- C . The TiO2- C film exhibits a significant red-shift in the band-gap transition, a narrow band gap of 2.77 eV, and excellent photocatalytic performance, more than two times higher than that of undoped TiO2 film. This method is simple, efficient, economical, environmentally friendly, and adapts to mass production. This experimental strategy can also be used in preparing other doped elements.
