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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science for Optoelectronics

    Background:

    • Visible-light integrated photonics is crucial for applications in sensing, quantum information, communications, imaging, and displays.
    • High-index-contrast silicon nitride (Si3N4) waveguides are ideal for visible light due to broadband transparency and high integration.
    • On-chip optical power monitoring is essential for complex photonic integrated circuits (PICs) to ensure stability and reconfiguration.

    Purpose of the Study:

    • To present a novel semi-transparent in-line power monitor for Si3N4 waveguides operating in the visible spectrum.
    • To demonstrate the device's capability for high-sensitivity monitoring and control of visible-light PICs.

    Main Methods:

    • Integration of a hydrogenated amorphous-silicon (a-Si:H) photoconductive film evanescently coupled to Si3N4 waveguides.
    • Operation at a red-light wavelength of 660 nm.
    • Characterization of responsivity, sensitivity, and time response.

    Main Results:

    • The proposed device achieved a responsivity of 30 mA/W.
    • A high sensitivity of -45 dBm was demonstrated.
    • A fast sub-microsecond time response was recorded.

    Conclusions:

    • The developed a-Si:H photoconductor is suitable for in-line power monitoring in visible-light Si3N4 PICs.
    • The device's performance enables precise control and stabilization of complex photonic systems.
    • This technology advances the practical implementation of visible-light integrated photonic devices.