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Published on: September 28, 2016
Integrated CuO/Pd Nanospike Hydrogen Sensor on Silicon Substrate
Ru Lin1,2, Qi Hu1,3, Zuolian Liu1
1School of Physics and Materials Sciences, Guangzhou University, Guangzhou 510006, China.
Abstract:
A large area of randomly distributed nanospike as nanostructured template was induced by femtosecond (fs) laser on a silicon substrate in water. Copper oxide (CuO) and palladium (Pd) heterostructured nanofilm were coated on the nanospikes by magnetron sputtering technology and vacuum thermal evaporation coating technology respectively for the construction of a p-type hydrogen sensor. Compared with the conventional gas sensor based on CuO working at high temperature, nanostructured CuO/Pd heterostructure exhibited promising detection capability to hydrogen at room temperature. The detection sensitivity to 1% H2 was 10.8%, the response time was 198 s, and the detection limit was as low as 40 ppm, presenting an important application prospect in the clean energy field. The excellent reusability and selectivity of the CuO/Pd heterostructure sensor toward H2 at room temperature were also demonstrated by a series of cyclic response characteristics. It is believed that our room-temperature hydrogen sensor fabricated with a waste-free green process, directly on silicon substrate, would greatly promote the future fabrication of a circuit-chip integrating hydrogen sensor.

