Related Experiment Video
Updated: Sep 23, 2025
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric
Maxim Rakhlin1, Grigorii Klimko1, Sergey Sorokin1
1Ioffe Institute, 194021 St. Petersburg, Russia.
Abstract:
We report on single-photon emitters for the telecommunication O-band (1260-1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function g(2)(0) = 0.18 at 8 K.
