Related Experiment Video
Updated: Sep 23, 2025

Scale-up Chemical Synthesis of Thermally-activated Delayed Fluorescence Emitters Based on the Dibenzothiophene-S,S-Dioxide Core
Published on: October 24, 2017
Hybrid Passivated Red Organic LEDs with Prolonged Operation and Storage Lifetime
Dan-Dan Feng1, Shuang-Qiao Sun1, Wei He1
1Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
Abstract:
In addition to mobile and TV displays, there is a trend of organic LEDs being applied in niche markets, such as microdisplays, automobile taillights, and photobiomodulation therapy. These applications mostly do not require to be flexible in form but need to have long operation lifetimes and storage lifespans. Using traditional glass encapsulation may not be able to fulfill the rigorous product specification, and a hybrid encapsulation method by combining glass and thin-film encapsulation will be the solution. Conventional thin-film encapsulation technology generally involves organic and inorganic multilayer films that are thick and have considerable stress. As a result, when subjected to extreme heat and stress, the film easily peels off. Herein, the water vapor transmission rate (WVTR) of a 2 µm silicon nitride film prepared at 85 °C is less than 5 × 10-5 g/m2/day and its stress is optimized to be 23 MPa. Red organic LEDs are passivated with the hybrid encapsulation, and the T lifetime reaches nearly 10 years if the LED is continuously driven at an initial luminance of 1000 cd/m2. In addition, a storage lifespan of over 17 years is achieved.
More Related Videos
07:44Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
10:41Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
Published on: May 31, 2018
Related Concept Videos
Photoluminescence: Applications
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...