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Family of Ideal Chern Flatbands with Arbitrary Chern Number in Chiral Twisted Graphene Multilayers
Patrick J Ledwith1, Ashvin Vishwanath1, Eslam Khalaf1
1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Abstract:
We consider a family of twisted graphene multilayers consisting of n-untwisted chirally stacked layers, e.g., AB, ABC, etc, with a single twist on top of m-untwisted chirally stacked layers. Upon neglecting both trigonal warping terms for the untwisted layers and the same sublattice hopping between all layers, the resulting models generalize several remarkable features of the chiral model of twisted bilayer graphene (CTBG). In particular, they exhibit a set of magic angles which are identical to those of CTBG at which a pair of bands (i) are perfectly flat, (ii) have Chern numbers in the sublattice basis given by ±(n,-m) or ±(n+m-1,-1) depending on the stacking chirality, and (iii) satisfy the trace condition, saturating an inequality between the quantum metric and the Berry curvature, and thus realizing ideal quantum geometry. These are the first higher Chern bands that satisfy (iii) beyond fine-tuned models or combinations of Landau levels. We show that ideal quantum geometry is directly related to the construction of fractional quantum Hall model wave functions. We provide explicit analytic expressions for the flatband wave functions at the magic angle in terms of the CTBG wave functions. We also show that the Berry curvature distribution in these models can be continuously tuned while maintaining perfect quantum geometry. Similar to the study of fractional Chern insulators in ideal C=1 bands, these models pave the way for investigating exotic topological phases in higher Chern bands for which no Landau level analog is available.
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