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Efficient binary and QAM optical modulation in ultra-compact MZI structures utilizing indium-tin-oxide.

Sohrab Mohammadi-Pouyan1, Mehdi Miri2, Mohammad Hossein Sheikhi1

  • 1School of Electrical and Computer Engineering, Shiraz University, Shiraz, Iran.

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|May 17, 2022
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Summary
This summary is machine-generated.

This study introduces a novel CMOS-compatible active waveguide utilizing indium-tin-oxide (ITO) with epsilon-near-zero properties for enhanced optical modulation. The design achieves significant improvements in speed, power consumption, and footprint for electro-absorption and quadrature-amplitude modulators.

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Area of Science:

  • Photonics and Optoelectronics
  • Materials Science
  • Electrical Engineering

Background:

  • Indium-tin-oxide (ITO) exhibits epsilon-near-zero (ENZ) properties, enabling significant changes in optical characteristics.
  • Existing optical modulators face challenges in speed, power consumption, and miniaturization.
  • CMOS-compatible designs are crucial for integrating photonic devices with electronic circuits.

Purpose of the Study:

  • To propose and simulate a novel CMOS-compatible active waveguide using the ENZ property of ITO.
  • To demonstrate the waveguide's potential as an electro-absorption modulator and in Mach-Zehnder interferometer (MZI) based modulators.
  • To achieve high-performance optical modulation with reduced energy consumption and footprint.

Main Methods:

  • A metal-oxide-semiconductor (MOS) waveguide structure (TiN/HfO2/ITO) was designed and simulated.
  • The epsilon-near-zero (ENZ) property of ITO was leveraged to tune the effective index.
  • The waveguide was configured as an electro-absorption modulator and integrated into binary and quadrature-amplitude modulators (QAM) within an MZI structure.

Main Results:

  • The electro-absorption modulator exhibited low insertion loss (0.38 dB/μm), high extinction ratio (11 dB/μm), and low energy consumption (11.87 fJ/bit).
  • Binary modulators achieved low insertion loss (1.24 dB), high extinction ratio (54 dB), and competitive VπLπ (6.4 V μm).
  • 4-QAM modulators demonstrated ultra-low energy consumption (2 fJ/bit) and high bit rates (560 Gbps) within a compact 6.2 μm length, with symmetry enabling advanced modulation schemes like 16-QAM.

Conclusions:

  • The proposed ITO-based active waveguide offers significant advantages for high-speed, low-power optical modulation.
  • The design enables compact and efficient binary and advanced QAM modulators for next-generation optical communication systems.
  • This work presents the first demonstration of ITO-based QAM modulators, highlighting their unique performance characteristics.