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Naphthodithiophene-Based Donor-Acceptor Polymers: Versatile Semiconductors for OFETs and OPVs
Itaru Osaka1,2, Toru Abe1, Masafumi Shimawaki1
1Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan.
Novel naphthodithiophene (NDT3)-based polymers show close π-π stacking, enabling high performance in organic electronics. One polymer achieved high field-effect mobility and power conversion efficiency, highlighting NDT3
Area of Science:
- Organic electronics
- Materials science
- Polymer chemistry
Background:
- Developing high-performance semiconducting polymers is crucial for advancing organic electronics.
- Donor-acceptor (D-A) polymers offer tunable electronic properties.
- Naphthodithiophene (NDT3) is a novel building block for polymer design.
Purpose of the Study:
- To synthesize and characterize novel naphthodithiophene (NDT3)-based donor-acceptor semiconducting polymers.
- To investigate the structure-property relationships, focusing on π-π stacking and electronic performance.
- To evaluate their potential for organic field-effect transistors (OFETs) and organic photovoltaics (OPVs).
Main Methods:
- Synthesis of a series of NDT3-based D-A polymers.
- Characterization using techniques such as NMR, GPC, UV-Vis, and cyclic voltammetry.
- Device fabrication and characterization for OFET mobility and OPV power conversion efficiency (PCE).
Main Results:
- The synthesized polymers exhibited very close π-π stacking (3.5 Å) due to their large π system and D-A structure.
- The polymer PNDT3NTz-DT demonstrated excellent versatility, achieving a field-effect mobility of ~0.5 cm²/ (V s) and a PCE of ~5%.
- These properties position NDT3 as a promising core unit for high-performance semiconducting polymers.
Conclusions:
- NDT3 is a versatile core unit for designing high-performance semiconducting polymers.
- The strategy of using highly π-extended heteroarenes as both donor and acceptor units is effective.
- The developed polymers show significant potential for applications in OFETs and OPVs.
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