Influence of Varying Tensile Stress on Domain Motion

Magnetic domain motion has been widely studied in the fields of spintronics, nanowires, and thin films. However, there is a lack of such studies on industrial steels, especially for domain motion under the action of varying stress. Understanding domain motion under stress is helpful for the improvement of evaluation accuracy and the establishment of theoretical models of passive, nondestructive testing technology. This paper presents the influence of varying tensile stresses on the magnetic domain motion of silicon steel sheets. Magnetic domain rotation and domain wall displacement were characterized using magnetic domain images, and their motion mechanisms under elastic and plastic stresses are presented. The results show that the domain rotation under stress involves reversible and irreversible changes. The effect of material rearrangement on domain rotation and domain wall displacement after plastic deformation is discussed. Based on the motion mechanism, a threshold stress value (TSV) required for the complete disappearance of the supplementary domains in the elastic range is proposed, enabling the classification of the elastic stress ranges in which the reversible and irreversible domain rotations occur. In addition, the effect of microstructure on TSV is also discussed, and the results show that the regions far away from the grain boundary need larger stresses to complete an irreversible domain rotation. Additionally, the domain width and orientation also affect the TSV. These findings regarding the domain motion mechanism and TSV can help to explain the sequence of domain rotation under stress and modify the stress assessment under dynamic loads in electromagnetic nondestructive evaluation, especially in the magnetic memory method.