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Updated: Sep 22, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Resonant Scattering in Proximity-Coupled Graphene/Superconducting Mo2 C Heterostructures
Meng Hao1, Chuan Xu2, Cheng Wang1
1Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China.
Abstract:
The realization of high-quality heterostructures or hybrids of graphene and superconductor is crucial for exploring various novel quantum phenomena and devices engineering. Here, the electronic transport on directly grown high-quality graphene/Mo2 C vertical heterostructures with clean and sharp interface is comprehensively investigated. Owing to the strong interface coupling, the graphene layer feels an effective confinement potential well imposed by two-dimensional (2D) Mo2 C crystal. Employing cross junction device geometry, a series of resonance-like magnetoresistance peaks are observed at low temperatures. The temperature and gate voltage dependences of the observed resonance peaks give evidence for geometric resonance of electron cyclotron orbits with the formed potential well. Moreover, it is found that both the amplitude of resonance peaks and conductance fluctuation exhibit different temperature-dependent behaviors below the superconducting transition temperature of 2D Mo2 C, indicating the correlation of quantum fluctuations and superconductivity. This study offers a promising route toward integrating graphene with 2D superconducting materials, and establishes a new way to investigate the interplay of massless Dirac fermion and superconductivity based on graphene/2D superconductor vertical heterostructures.
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