Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Heteroepitaxial Control of Thickness, Strain, and Domain Architecture in Few-Layer Ferroelectric Tin Monochalcogenides.

ACS nano·2026

Same author

Metallic charge transport in conjugated molecular bilayers.

Nature electronics·2026

Same author

Nanoscale temperature mapping through thermal vibration characterization using scanning precession electron diffraction.

Science advances·2026

Same author

Long-range optical coupling with epsilon-near-zero materials.

Nature communications·2025

Same author

Semiconducting Tungsten Trioxide Thin Films for High-Performance SERS Biosensors.

Nanomaterials (Basel, Switzerland)·2025

Same author

Moiré Engineering of Interlayer Coupling in WS<sub>2</sub>/MoS<sub>2</sub> Monolayers.

Nano letters·2025

Search research articles

Related Experiment Video

Updated: Sep 22, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures.

Qi Wu^1,2, Zixuan Fang³, Yuelei Zhu⁴

¹School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.

|May 25, 2022

Summary

This summary is machine-generated.

Researchers control the twist rate in germanium sulfide (GeS) crystals by adjusting growth temperature. They also created new germanium selenide/germanium sulfide (GeSe/GeS) heterostructures with enhanced electronic and optical properties for future electronics.

Keywords:

edge epitaxy germanium selenide (GeSe)helical twistronics van der Waals (vdWs)

More Related Videos

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Related Experiment Videos

Last Updated: Sep 22, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

Condensed matter physics
Materials science
Nanotechnology

Background:

Twistronics, utilizing van der Waals (vdWs) materials, is a rapidly developing field in condensed matter physics.
Recent advancements include three-dimensional (3D) helical architectures in germanium sulfide (GeS) crystals.

Purpose of the Study:

To demonstrate a method for controlling the twist rate in helical GeS crystals.
To fabricate novel 3D helical heterostructures using GeS and germanium selenide (GeSe).
To investigate the electronic and optoelectronic properties of these new heterostructures.

Main Methods:

Controlled synthesis of helical GeS crystals by tuning growth temperature.
Fabrication of GeSe/GeS heterostructures via edge epitaxy.
Characterization of structural, electrical, and photoresponse properties.

Main Results:

Growth temperature directly influences the twist angle in GeS mesowires (MWs), with higher temperatures yielding smaller twist angles.
Self-assembled helical GeSe/GeS heterostructures were successfully fabricated, inheriting both helical architecture and moiré superlattices.
The fabricated GeSe/GeS heterostructures showed improved electrical conductivity and photoresponse compared to pure GeS MWs.

Conclusions:

Growth temperature is a viable parameter for tailoring the twist rate in 3D vdWs materials.
Helical GeSe/GeS heterostructures offer enhanced optoelectronic performance.
These findings open new avenues for 3D twistronics in advanced electronics and optoelectronics.