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Updated: Sep 21, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Nonvolatile Ferroelectric Memory with Lateral β/α/β In2Se3 Heterojunctions
Siyuan Wan1,2, Qi Peng1,2, Ziyu Wu1,2
1School of Physics and Materials Science, Nanchang University, Nanchang 330031, China.
Abstract:
The electric dipole locking effect observed in van der Waals (vdW) ferroelectric α-In2Se3 has resulted in a surge of applied research in electronics with nonvolatile functionality. However, ferroelectric tunnel junctions with advantages of lower power consumption and faster writing/reading operations have not been realized in α-In2Se3. Here, we demonstrate the tunneling electroresistance effect in a lateral β/α/β In2Se3 heterojunction built by local laser irradiation. Switchable in-plane polarizations of the vdW ferroelectric control the tunneling conductance of the heterojunction device by 4000% of magnitude. The electronic logic bit can be represented and stored with different orientations of electric dipoles. This prototype enables a new approach to rewritable nonvolatile memory with in-plane ferroelectricity in vdW 2D materials.
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