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Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN

Hsiang-Chun Wang1,2,3, Chia-Hao Liu3, Chong-Rong Huang3

  • 1College of Materials Science and Engineering, Shenzhen University-Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen 518060, China.

Materials (Basel, Switzerland)
|May 28, 2022
PubMed

Keywords:
etch-stop layerhigh selectivity rationormally offp-GaN gate HEMT

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