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Memristive Characteristics of the Single-Layer P-Type CuAlO2 and N-Type ZnO Memristors

Wenqing Song1,2, Xinmiao Li1, Ruihua Fang1

  • 1State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China.

Materials (Basel, Switzerland)
|May 28, 2022
PubMed

Keywords:
NiOZnOmemristorsoxygen ion migrationsingle-layer

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