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Optimization AlGaN/GaN HEMT with Field Plate Structures.

Ningping Shi1, Kejia Wang2, Bing Zhou1,3

  • 1School of Materials Science and Engineering, Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, China.

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|May 28, 2022
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Summary

Optimizing Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors (AlGaN/GaN HEMTs) using a gate-source composite field plate (SG-FP) significantly boosts breakdown voltage and figure of merit (FOM). This enhancement improves overall device performance for wider applications.

Keywords:
FOMGaN HEMTTCAD simulationbreakdown voltagefield plate

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • AlGaN/GaN High Electron Mobility Transistors (HEMTs) are crucial for high-power electronics.
  • Device optimization is essential to enhance performance metrics like breakdown voltage and figure of merit (FOM).
  • Field plate structures are commonly employed to improve the electric field distribution in HEMTs.

Purpose of the Study:

  • To investigate and optimize different field plate designs in AlGaN/GaN HEMTs.
  • To determine the optimal dimensions for field plates to maximize device breakdown voltage.
  • To evaluate the electrical characteristics and performance of HEMTs with various field plate structures.

Main Methods:

  • Device simulation using Silvaco TCAD software to investigate optimal field plate dimensions.
  • Fabrication of several AlGaN/GaN HEMT devices based on simulation findings.
  • Experimental analysis of electrical characteristics, including breakdown voltage and on-resistance.

Main Results:

  • The gate-source composite field plate (SG-FP) design demonstrated superior performance compared to other field plate structures.
  • Devices with SG-FP achieved a significantly higher breakdown voltage.
  • The optimized SG-FP structure resulted in a figure of merit (FOM) of 504 MW/cm².

Conclusions:

  • The gate-source composite field plate (SG-FP) effectively enhances the breakdown voltage and optimizes the FOM of AlGaN/GaN HEMTs.
  • The SG-FP design improves intrinsic on-resistance, leading to better overall electrical performance.
  • Optimized AlGaN/GaN HEMTs with SG-FP exhibit a wider application range in high-power electronic systems.