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Infrared Transmission Characteristics of Phase Transitioning VO2 on Various Substrates
Samee Azad1, Durga Gajula2, Nawraj Sapkota3
1Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA.
Abstract:
Infrared transmission characteristics of VO2 thin films synthesized on multiple substrates, using a low-pressure direct oxidation technique, have been characterized. Material characterization of these films indicates high material quality, which resulted in large variation of electrical and optical properties at phase transition. A change in optical transmissivity greater than 80% was observed for these films utilizing infrared (IR) laser illumination at 1550 nm. Phase transition enabled by temperature change induced by a pulsed high-power laser beam resulted in modulated IR laser transmission with a low time constant in VO2 on transparent quartz and muscovite substrates. Investigation of the effect of mechanical strain on phase transition in VO2 grown on flexible muscovite substrate indicate shift in transition temperature to higher for tensile and lower for compressive strains.
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