Pressure evolution of electronic and structural properties in transition metal dichalcogenide 1T-Co_1.06Te₂

Two-dimensional transition metal dichalcogenides (TMDs) are important materials for promising electronic devices because they usually exhibit excellent and highly tunable electronic properties. Here, we report on the pressure-driven electronic phase transition in a TMD 1T-Co_1.06Te₂. High-pressure transport measurements reveal a sign reversal of the Hall coefficients at a critical point ofP_C∼ 32 GPa, evidencing a transition from hole band(s) dominated transport into one that is dominated by electron band(s). Synchrotron x-ray diffraction experiments demonstrate that no structural phase transition occurs below 46.3 GPa, indicating an electronic origin of the transition. Moreover, a kink anomaly of the lattice constant ratioc/ais also observed atP=P_C. These results might indicate a Lifshitz transition which refers to a change of Fermi surface topology in absence of structural transition.