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    Area of Science:

    • Photonics
    • Semiconductor Lasers
    • Integrated Optics

    Background:

    • Narrow-linewidth lasers are crucial for advanced applications like microwave photonics.
    • Indium phosphide (InP) active-passive platforms offer potential for integrated photonic devices.
    • Generic foundry platforms are key for reproducible and cost-effective manufacturing.

    Purpose of the Study:

    • To demonstrate a hybridly integrated semiconductor ring laser with an ultra-narrow intrinsic linewidth.
    • To explore the use of an InP active-passive platform with an integrated low-loss resonator.
    • To establish a path towards low-cost, reproducible photonic integrated circuits (PICs) for microwave photonics (MWP).

    Main Methods:

    • Hybrid integration of two photonic integrated circuits (PICs).
    • Utilizing an InP active-passive platform.
    • Incorporating an integrated low-loss resonator within the telecom C band.

    Main Results:

    • Achieved a hybridly integrated semiconductor ring laser with an intrinsic linewidth of (158±21) Hz.
    • First demonstration of an InP active-passive platform combined with an integrated resonator for narrow-linewidth lasers on generic foundry platforms.
    • The device integrates multiple active-passive components.

    Conclusions:

    • The developed hybrid integration approach offers a viable path for producing narrow-linewidth lasers.
    • This technology is promising for advancing microwave photonics (MWP) due to the potential translation of narrow optical linewidth to narrow microwave signals.
    • The use of generic foundry platforms ensures a route to reproducible and cost-effective devices.