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Ultralow-linewidth ring laser using hybrid integration and generic foundry platforms.

Mónica Far Brusatori, Daniel N Duplat, Iterio Degli-Eredi

|June 1, 2022

Summary

This summary is machine-generated.

We developed a narrow-linewidth semiconductor ring laser using hybridly integrated photonic integrated circuits (PICs). This breakthrough in indium phosphide (InP) active-passive platforms enables cost-effective, reproducible devices for microwave photonics applications.

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Area of Science:

Photonics
Semiconductor Lasers
Integrated Optics

Background:

Narrow-linewidth lasers are crucial for advanced applications like microwave photonics.
Indium phosphide (InP) active-passive platforms offer potential for integrated photonic devices.
Generic foundry platforms are key for reproducible and cost-effective manufacturing.

Purpose of the Study:

To demonstrate a hybridly integrated semiconductor ring laser with an ultra-narrow intrinsic linewidth.
To explore the use of an InP active-passive platform with an integrated low-loss resonator.
To establish a path towards low-cost, reproducible photonic integrated circuits (PICs) for microwave photonics (MWP).

Main Methods:

Hybrid integration of two photonic integrated circuits (PICs).
Utilizing an InP active-passive platform.
Incorporating an integrated low-loss resonator within the telecom C band.

Main Results:

Achieved a hybridly integrated semiconductor ring laser with an intrinsic linewidth of (158±21) Hz.
First demonstration of an InP active-passive platform combined with an integrated resonator for narrow-linewidth lasers on generic foundry platforms.
The device integrates multiple active-passive components.

Conclusions:

The developed hybrid integration approach offers a viable path for producing narrow-linewidth lasers.
This technology is promising for advancing microwave photonics (MWP) due to the potential translation of narrow optical linewidth to narrow microwave signals.
The use of generic foundry platforms ensures a route to reproducible and cost-effective devices.