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Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Updated: Sep 21, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Light-field-driven electronics in the mid-infrared regime: Schottky rectification.

Maria T Schlecht¹, Matthias Knorr², Christoph P Schmid²

¹Chair for Applied Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), D-91058 Erlangen, Germany.

Science Advances

|June 3, 2022

Summary

Researchers explored light-field-driven electronics using graphene Schottky diodes. Intense infrared light pulses enabled faster charging and discharging, overcoming conventional electronic speed limits.

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Last Updated: Sep 21, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Area of Science:

Solid State Physics
Optoelectronics
Materials Science

Background:

Conventional semiconductor device speed is limited by RC timescale (charging/discharging time).
Exploring alternative methods to overcome these limitations is crucial for next-generation electronics.

Purpose of the Study:

Investigate the potential of diodes under intense mid-infrared light-field pulses.
To circumvent the ubiquitous RC timescale limitation in conventional electronics.

Main Methods:

Utilized epitaxial graphene on silicon carbide as an ultrarobust Schottky diode.
Applied intense mid-infrared light-field pulses to the diode.
Theoretically described phenomena using tunneling through a light-field-modulated Schottky barrier and dynamical accumulation correction.

Main Results:

Observed suppressed forward direction and a characteristic signal in reverse bias under infrared light.
The developed model accurately describes the experimentally observed infrared phenomena.
Demonstrated that cycle-by-cycle dynamics dictate rectification.

Conclusions:

Light-field-driven electronics offer a pathway to overcome conventional speed limitations.
The demonstrated graphene-based Schottky diode shows potential for high-speed electronic applications.
This approach paves the way for rapidly increasing functionality in light-field-driven devices.