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Updated: Sep 21, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Resonant Tunneling between Quantized Subbands in van der Waals Double Quantum Well Structure Based on Few-Layer WSe2
Kei Kinoshita1, Rai Moriya1, Shota Okazaki2
1Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Abstract:
We demonstrate van der Waals double quantum well (vDQW) devices based on few-layer WSe2 quantum wells and a few-layer h-BN tunnel barrier. Due to the strong out-of-plane confinement, an exfoliated WSe2 exhibits quantized subband states at the Γ point in its valence band. Here, we report resonant tunneling and negative differential resistance in vDQW at room temperature owing to momentum- and energy-conserved tunneling between the quantized subbands in each well. Compared to single quantum well (QW) devices with only one QW layer possessing quantized subbands, superior current peak-to-valley ratios were obtained for the DQWs. Our findings suggest a new direction for utilizing few-layer-thick transition metal dichalcogenides in subband QW devices, bridging the gap between two-dimensional materials and state-of-the-art semiconductor QW electronics.
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