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"Clean" doping to advance 2D material phototransistors.
Zhen Wang1, Peng Wang2, Weida Hu3
1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China.
Light, Science & Applications
|June 6, 2022
Summary
Researchers developed "clean" doping for two-dimensional indium selenide (2D InSe) using neutron transmutation. This method enhances electric and photoelectric performance, even after device fabrication, advancing next-generation electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Doping is crucial for advancing electronic and optoelectronic devices.
- Current doping methods face limitations during material synthesis and device fabrication.
- Two-dimensional (2D) indium selenide (InSe) shows promise for next-generation applications.
Purpose of the Study:
- To introduce a novel "clean" doping strategy for 2D InSe.
- To enhance the electrical and photoelectric properties of 2D InSe.
- To demonstrate doping effectiveness post-device fabrication.
Main Methods:
- Utilizing neutron transmutation doping (NTD) on 2D InSe.
- Characterizing the doped InSe material.
- Fabricating and testing devices to evaluate performance enhancement.
Main Results:
- Successfully achieved "clean" doping in 2D InSe.
- Demonstrated significant improvements in electrical conductivity.
- Observed enhanced photoelectric performance of the doped InSe devices.
- Confirmed the feasibility of doping after device fabrication.
Conclusions:
- Neutron transmutation doping offers a viable "clean" method for 2D InSe.
- This technique overcomes limitations of traditional doping approaches.
- The enhanced performance of doped 2D InSe paves the way for advanced electronic and optoelectronic devices.
