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"Clean" doping to advance 2D material phototransistors
Zhen Wang1, Peng Wang2, Weida Hu3
1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China.
Light, Science & Applications
|June 6, 2022
Abstract:
Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal "clean" doping to enhance the electric and photoelectric performance of two-dimensional (2D) indium selenide (InSe) via a neutron-transmutation method for the first time, even after device fabrication.
