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Five coordinated Mn in Ba4Mn2Si2Te9: synthesis, crystal structure, physical properties, and electronic structure
Sweta Yadav1, Subhendu Jana1, Gopabandhu Panigrahi1
1Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India. jaiprakash@chy.iith.ac.in.
This study reports the synthesis of a new manganese-containing quaternary chalcogenide, Ba4Mn2Si2Te9. This material exhibits semiconducting properties with a low thermal conductivity, making it a potential candidate for thermoelectric applications.
Area of Science:
- Solid-state chemistry
- Materials science
- Crystallography
Background:
- Quaternary chalcogenides are promising materials for various applications.
- Understanding the structure-property relationships in novel materials is crucial for technological advancement.
Purpose of the Study:
- To synthesize and characterize a new transition metal-containing quaternary chalcogenide, Ba4Mn2Si2Te9.
- To investigate its structural, electronic, and thermal properties.
Main Methods:
- Solid-state synthesis at 1273 K.
- Single-crystal X-ray diffraction for structural determination.
- Optical absorption, resistivity, and thermal conductivity measurements.
- Density Functional Theory (DFT) calculations.
Main Results:
- Single-crystals of Ba4Mn2Si2Te9 were successfully synthesized.
- The material crystallizes in the orthorhombic system (Pbam) with disordered Mn sites.
- It exhibits semiconducting behavior with a direct bandgap of 0.6(1) eV.
- Extremely low thermal conductivity (κ) was observed, decreasing with increasing temperature.
- DFT studies indicate bandgap dependence on magnetic ordering.
Conclusions:
- Ba4Mn2Si2Te9 is a novel quaternary chalcogenide with a unique crystal structure.
- Its semiconducting nature and exceptionally low thermal conductivity suggest potential for thermoelectric applications.
- Further studies on magnetic ordering and thermoelectric performance are warranted.
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