Atomic layer deposited Al₂O₃ as a protective overlayer for focused ion beam preparation of plan-view STEM samples

Preservation of analyte integrity during focused ion beam (FIB) sample preparation is a significant challenge in the scanning transmission electron microscopy (STEM) characterization of plan-view samples with sensitive surface chemistries. This can preclude the characterization of atomic arrangements, nanoscale surface coverages, and distributions and morphologies of functional molecular materials composed of surface-immobilized metal nanoparticles, clusters or coordination complexes. This work demonstrates effective protection of Pt nanoparticle (NP) morphology through a plan-view FIB lift-out and thinning procedure by encapsulating the sample surface in an Al₂O₃ overlayer grown by atomic layer deposition (ALD). High-angle annular dark field (HAADF)-STEM analysis was used in concert with energy dispersive X-ray spectroscopy (EDS) to identify and image sub-10 nm features attributed to Pt and to evaluate the distribution of implanted Ga⁺ (derived from the FIB milling beam). ALD is a mild chemical vapor deposition (CVD) technique that has the capability to generate dense, pinhole-free films with tunable compositions and properties, making this ALD-FIB procedure applicable to many sample architectures for plan-view lamella preparation and STEM analysis.