Field Electron Emission from Crumpled CVD Graphene Patterns Printed via Laser-Induced Forward Transfer.

Area of Science:

• Materials Science
• Nanotechnology
• Surface Science

Background:

• Graphene field emitters are crucial for electron emission applications.
• Current fabrication methods often require controlled environments and high temperatures.
• Developing cost-effective and scalable fabrication techniques is essential.

Purpose of the Study:

• To demonstrate a new method for fabricating graphene field emitters.
• To enable fabrication at room temperature and ambient conditions.
• To assess the field emission properties of the fabricated graphene structures.

Main Methods:

• Utilized blister-based laser-induced forward transfer (LIFT) of chemical vapor deposition (CVD) synthesized single-layer graphene.
• Controlled the shape and orientation of graphene flakes for field emission.
• Characterized graphene quality using Raman spectroscopy.
• Evaluated electron field emission properties of 1 × 1 mm² crumpled graphene imprints.

Main Results:

• Successfully fabricated graphene field emitters on various substrates.
• Achieved controlled flake orientation and pattern formation.
• Preserved the high quality of single-layer graphene post-transfer, confirmed by Raman spectroscopy.
• Demonstrated good adhesion and electron emission characteristics of the transferred graphene.

Conclusions:

• The demonstrated LIFT technique offers a viable route for room-temperature, ambient fabrication of graphene field emitters.
• The method effectively creates crumpled graphene patterns with promising emission properties.
• This approach facilitates the integration of high-quality graphene into various electronic devices.