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High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films
Yanling Song1, Qiyuan Wu1, Caihong Jia1
1Henan Key Laboratory of Photovoltaic Materials, Center for Topological Functional Materials, Henan University Kaifeng 475004 People's Republic of China wfzhang@henu.edu.cn.
RSC Advances
|June 10, 2022
Summary
Gadolinium and Nickel codoped bismuth ferrite films exhibit significant ferroelectric resistance switching. These materials show a high on/off ratio, paving the way for advanced nonvolatile memory applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Bismuth ferrite (BiFeO3) is a multiferroic material with potential for memory applications.
- Enhancing ferroelectric and resistive switching properties is crucial for device performance.
Purpose of the Study:
- To investigate the ferroelectric and resistive switching properties of Gadolinium (Gd) and Nickel (Ni) codoped BiFeO3 films.
- To explore the potential of these codoped films in nonvolatile memory devices.
Main Methods:
- Epitaxial growth of BiFeO3, Bi0.92Gd0.08FeO3 (BGFO), and Bi0.92Gd0.08Fe0.95Ni0.05O3 (BGFNO) films on Nb-doped SrTiO3 (NSTO) substrates.
- Characterization using piezoresponse force microscopy (PFM) and polarization-voltage (P-V) measurements.
- Electrical testing of Au/BGFNO/NSTO devices to evaluate resistance switching (RS) characteristics.
Main Results:
- BGFNO films exhibit strong ferroelectric properties.
- Au/BGFNO/NSTO devices demonstrate ferroelectric resistance switching with a high on/off ratio up to 3 × 10^6.
- The devices show excellent retention and anti-fatigue characteristics.
Conclusions:
- Gd and Ni codoping significantly enhance the resistance switching performance of BiFeO3 films.
- The memristor behavior is attributed to polarization switching modulating interfacial barriers.
- Au/BGFNO/NSTO devices show promise for nonvolatile memory applications.
