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Updated: Sep 20, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Adatom-Driven Oxygen Intermixing during the Deposition of Oxide Thin Films by Molecular Beam Epitaxy
Tiffany C Kaspar1, Peter Hatton2, Kayla H Yano3
1Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States.
Abstract:
Thin film deposition from the vapor phase is a complex process involving adatom adsorption, movement, and incorporation into the growing film. Here, we present quantitative experimental data that reveals anion intermixing over long length scales during the deposition of epitaxial Fe2O3 and Cr2O3 films and heterostructures by oxygen-plasma-assisted molecular beam epitaxy. We track this diffusion by incorporating well-defined tracer layers containing 18O and/or 57Fe and measure their redistribution on the nanometer scale with atom probe tomography. Molecular dynamics simulations suggest potential intermixing events, which are then examined via nudged elastic band calculations. We reveal that adatoms on the film surface act to "pull up" subsurface O and Fe. Subsequent ring-like rotation mechanisms involving both adatom and subsurface anions then facilitate their mixing. In addition to film deposition, these intermixing mechanisms may be operant during other surface-mediated processes such as heterogeneous catalysis and corrosion.
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