Magnetoresistance of Ni/WSe₂/Ni junctions: robustness against the thickness of WSe₂

Magnetoresistive materials are vital for the development of storage devices. Using the first-principles transport simulations with nonequilibrium Green's function calculation, we investigate the magnetoresistive properties of Ni/WSe₂/Ni junctions withm-layers of WSe₂(m= 1, 2, ⋯ ,6). Form≤ 2, the junctions are metallic inspite of the semiconducting nature of few-layer WSe₂. However, the junctions exhibit transport gaps form> 2. Interestingly, magnetoresistance of the junctions stays around 6% when there are more than one layer of WSe₂in the center, which is closely related to the robust spacial variation of interfacial properties and can be attributed to no spin flipping in tunneling regions. Our results suggest that Ni/WSe₂/Ni junctions have a robust magnetoresistance which is insensitive to the thickness of WSe₂.