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Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic

Mengying Liu1, Weijie Li1, Dan Cheng1,2

  • 1State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.

RSC Advances
|June 15, 2022
PubMed

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