Electrically injected supersymmetric semiconductor lasers with narrow vertical divergence angle.

Area of Science:

• Optoelectronics
• Semiconductor physics
• Laser technology

Background:

• Semiconductor lasers are crucial optoelectronic devices.
• Achieving single-mode operation and high-quality beam patterns is a persistent challenge.
• Supersymmetry (SUSY) transformations offer a novel approach to manipulate optical modes.

Purpose of the Study:

• To propose and fabricate electrically injected semiconductor lasers utilizing supersymmetry transformations.
• To investigate the mode discrimination properties of SUSY semiconductor lasers.
• To characterize the far-field emission pattern of the fabricated devices.

Main Methods:

• Applying two successive SUSY transformations to the main array along the epitaxial growth direction.
• Designing the laser array to selectively remove specific propagation constants (fundamental and leaky modes).
• Fabricating the proposed SUSY semiconductor laser structure.

Main Results:

• The SUSY transformations successfully removed the propagation constants of the fundamental and leaky modes.
• The fabricated SUSY laser exhibited excellent mode discrimination, favoring fundamental mode lasing.
• A single-lobe vertical far-field pattern with a 16.87° FWHM was achieved at 1.4 A injection current.

Conclusions:

• Electrically injected SUSY semiconductor lasers can effectively achieve superior mode discrimination.
• The proposed SUSY approach enables preferential lasing of the fundamental mode.
• The fabricated devices demonstrate potential for high-quality beam emission in optoelectronic applications.