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Squeezing indium arsenide single crystal to ultrafine nanostructured compact bulk
Shuaiqi Li1, Xin Li1, Qin Yuan1
1Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China. duanweihe@scu.edu.cn.
Nanoscale
|June 22, 2022
Summary
Reciprocating pressure-induced phase transition (RPPT) successfully synthesized nanostructured Indium Arsenide (InAs) with controlled grain sizes. This novel method alters material properties, confirming RPPT
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Reciprocating pressure-induced phase transition (RPPT) offers a new route for synthesizing nanostructured bulk materials.
- Materials with reversible pressure-induced phase transitions are candidates for RPPT.
Purpose of the Study:
- To investigate the modulation effects on grain size using RPPT for Indium Arsenide (InAs).
- To confirm the feasibility of synthesizing nanostructured bulk materials via RPPT.
Main Methods:
- Utilized in situ high-pressure diamond anvil cell (DAC) technique to transform single-crystal InAs into nanostructures.
- Employed a large volume press (LVP) to synthesize compact nanostructured bulk InAs, verifying DAC findings.
Main Results:
- Transformed single-crystal InAs (30 μm) into nanostructures with an average grain size of 7 nm using RPPT in a DAC.
- Synthesized large-dimension (3.2 mm × 3.2 mm × 0.5 mm) nanostructured InAs (average grain size = 8 nm) using LVP.
- Observed changes in macroscopic properties: smaller work function (3.86 eV) and larger bandgap energy (2.64 eV) in nanostructured InAs.
Conclusions:
- RPPT is a feasible method for producing nanostructured bulk materials with controlled grain sizes.
- The nanostructure significantly affects the macroscopic properties of InAs.
- RPPT enables the synthesis of bulk nanostructured materials with clean grain boundaries.
